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M3D302
PBSS5350D 50 V low VCEsat PNP transistor
Product specification Supersedes data of 2001 Jul 13 2001 Nov 13
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
FEATURES * Low collector-emitter saturation voltage * High current capability * Improved device reliability due to reduced heat generation * Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS * Supply line switching circuits * Battery management applications * DC/DC convertor applications * Strobe flash units * Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SC-74 (SOT457) plastic package. NPN complement: PBSS4350D.
handbook, halfpage
PBSS5350D
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -50 -3 -5 <150 UNIT V A A m
6
5
4 1, 2, 5, 6 3
MARKING
1 2 3
MAM435
4
TYPE NUMBER PBSS5350D
MARKING CODE
Top view
53 Fig.1 Simplified outline (SC-74; SOT457) and symbol.
2001 Nov 13
2
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN.
PBSS5350D
MAX. -60 -50 -6 -3 -5 -1 600 750 +150 150 +150 V V V A A A
UNIT
mW mW C C C
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 208 160 UNIT K/W K/W
Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
2001 Nov 13
3
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS VCB = -50 V; IE = 0; Tj = 150 C emitter-base cut-off current DC current gain VEB = -5 V; IC = 0 VCE = -2 V; IC = -500 mA VCE = -2 V; IC = -1 A; note 1 VCE = -2 V; IC = -2 A; note 1 VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -200 mA; note 1 RCEsat VBEsat VBE fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage transition frequency collector capacitance IC = -2 A; IB = -200 mA; note 1 IC = -2 A; IB = -200 mA; note 1 MIN. - - - 200 200 100 - - - - - - 100 -
PBSS5350D
TYP. - - - - - - - - - 120 - - - -
MAX. -100 -50 -100 - - - -100 -180 -300 <150 -1.2 -1.1 - 40
UNIT nA A nA
collector-base cut-off current VCB = -50 V; IE = 0
mV mV mV m V V MHz pF
base-emitter turn-on voltage VCE = -2 V; IC = -1 A; note 1 IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz
2001 Nov 13
4
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350D
handbook, halfpage
1000
MGW167
handbook, halfpage
-1.2
MGW168
hFE 800
(1)
VBE (V) -0.8
(1)
600
(2)
400
(2)
-0.4 200
(3)
(3)
0 -10 -1
-1
-10
-102
-103 -104 I C (mA)
0 -10 -1
-1
-10
-102
-103 -104 I C (mA)
VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
(1) (2) (3)
MGW169
handbook, halfpage
-1.4 VBEsat (mV) -1.2 -1.0 -0.8 -0.6
MGW170
(1) (2)
-10
(3)
-0.4 -0.2 -10 -1
-1 -10 -1
-1
-10
-102
-103 -104 I C (mA)
-1
-10
-102
-103 -104 I C (mA)
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2001 Nov 13
5
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350D
handbook, halfpage
-1000
MGW171
(1) (2) (3) (4) (5) (6)
IC (mA)
handbook, halfpage
-5
MGW172
IC (mA)
(1) (2) (3)
-800
-4
(4) (5) (6) (7) (8) (9)
-600
(7) (8)
-3
(10)
-400
(9) (10)
-2
-200
(11) (12)
-1
0 0 Tamb = 25 C. (1) (2) (3) (4)
-0.4
-0.8
-1.2
-1.6 -2 VCE (V)
0 0 Tamb = 25 C.
-0.4
-0.8
-1.2
-1.6 -2 VCE (V)
IB = -3.96 nA. IB = -3.63 nA. IB = -3.30 nA. IB = -2.97 nA.
(5) (6) (7) (8)
IB = -2.64 nA. IB = -2.31 nA. IB = -1.98 nA. IB = -1.65 nA.
(9) IB = -1.32 nA. (10) IB = -0.99 nA. (11) IB = -0.66 nA. (12) IB = -0.33 nA.
(1) IB = -250 mA. (2) IB = -225 mA. (3) IB = -200 mA. (4) IB = -175 mA.
(5) IB = -150 mA. (6) IB = -125 mA. (7) IB = -100 mA. (8) IB = -75 mA.
(9) IB = -50 mA. (10) IB = -25 mA.
Fig.6
Collector current as a function of collector-emitter voltage; typical values.
Fig.7
Collector current as a function of collector-emitter voltage; typical values.
103 handbook, halfpage RCEsat () 102
MGU390
10
1
(1) (2)
10-1 -10-1 IC/IB = 20.
(3)
-1
-10
-102
-103 -104 IC (mA)
(1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.8
Collector-emitter equivalent on-resistance as a function of collector current; typical values.
2001 Nov 13
6
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PBSS5350D
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2001 Nov 13
7
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
PBSS5350D
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 13
8
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
NOTES
PBSS5350D
2001 Nov 13
9
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
NOTES
PBSS5350D
2001 Nov 13
10
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
NOTES
PBSS5350D
2001 Nov 13
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2001
Nov 13
Document order number:
9397 750 08947

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